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Characteristics of conduction minibands of Si/Si1-xGex superlattices
- Source :
- Journal of Applied Physics. March 15, 1994, Vol. 75 Issue 6, p3199, 3 p.
- Publication Year :
- 1994
-
Abstract
- A study of the conduction band characteristics of Si/Si(1-x)Ge(x) superlattices revealed that the most prominent feature of such double well-and-barrier superlattices was the merging of two adjacent state minibands that had islands in the center. Far infrared range photodetection uses optical transitions that occur across the miniband islands.
Details
- ISSN :
- 00218979
- Volume :
- 75
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.15369633