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Characteristics of conduction minibands of Si/Si1-xGex superlattices

Authors :
Cho, Sung M.
Lee, Hong H.
Source :
Journal of Applied Physics. March 15, 1994, Vol. 75 Issue 6, p3199, 3 p.
Publication Year :
1994

Abstract

A study of the conduction band characteristics of Si/Si(1-x)Ge(x) superlattices revealed that the most prominent feature of such double well-and-barrier superlattices was the merging of two adjacent state minibands that had islands in the center. Far infrared range photodetection uses optical transitions that occur across the miniband islands.

Details

ISSN :
00218979
Volume :
75
Issue :
6
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.15369633