Optimization of process parameters for the deposition of improved a-Ge:H by dc magnetron sputtering

The dependence of the optoelectronic properties and composition of hydrogenated amorphous germanium on substrate temperature and partial pressures of hydrogen and argon indicates the sputtered a-Ge:H to be chemically stable, with a density of 4 times 10 to the power of 22 atoms per square centimeter. The infrared spectra of the a Ge:H does not exhibit postoxidation characteristic features.