Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams

Vacancy-impurity complexes in polycrystalline Si (poly-Si) used as gate electrodes of HfSiON-based metal-oxide-semiconductor field-effect transistor (MOSFET) are detected by using monoenergetic positron beams. The results have suggested that suppression of the oxygen diffusion from high-k gate dielectrics into gate electrodes are necessary for MOSFETs and the positron annihilation parameter is sensitive to change in the vacancy-type defects in poly-Si used as gate electrodes.