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Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams
- Source :
- Journal of Applied Physics. August 1, 2006, Vol. 100 Issue 3, p034509-1, 6 p.
- Publication Year :
- 2006
-
Abstract
- Vacancy-impurity complexes in polycrystalline Si (poly-Si) used as gate electrodes of HfSiON-based metal-oxide-semiconductor field-effect transistor (MOSFET) are detected by using monoenergetic positron beams. The results have suggested that suppression of the oxygen diffusion from high-k gate dielectrics into gate electrodes are necessary for MOSFETs and the positron annihilation parameter is sensitive to change in the vacancy-type defects in poly-Si used as gate electrodes.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 100
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.152956392