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A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion region
- Source :
- IEEE Transactions on Electron Devices. Sept, 2006, Vol. 53 Issue 9, p2008, 9 p.
- Publication Year :
- 2006
-
Abstract
- A physics-based analytic solution to the MOSFET surface potential from the accumulation to strong-inversion region is derived, based on the complete surface potential equation of the bulk MOSFETs without replying on any smoothing functions or regional separation of MOSFET operation regions. The solution is tested and verified with numerical results for accuracy in the surface potential and transcapacitance predictions.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.152779257