Growth and properties of ion beam synthesized Si/CoxNi1-xSi2/Si(111) structures

Authors :: Wu, M.F.
De Wachter, J.
Van Bavel, A.-M.
Pattyn, H.
Langouche, G.
Vanhellemont, J.
Bender, H.
Temst, K.
Wuyts, B.
Bruynseraede, Y.
Source :: Journal of Applied Physics. Jan 15, 1994, Vol. 75 Issue 2, p1201, 3 p.
Publication Year :: 1994
Abstract: Ion beam is used to synthesize heteroepitaxial Co(x)Ni(1-x)Si2 layers with good crystalline quality. A ternary silicide layer with an x value of 0.66 exhibits a 11% type B and 89% type A orientation. Transmission electron microscope reveals that the Type B component is found at the interfaces and with a thickness consisting of a few monolayers. The unique distribution of the type B component in the epilayer is attributed to its small strain size, as observed from X-ray diffraction studies.