Impact of radiation-induced nonuniform damage near MOSFET junctions

Laterally nonuniform distributions of radiation-induced oxide charge and interface traps near MOSFET junctions have been found in a variety of samples, and such nonuniformities could significantly affect the transistor's transconductance, channel resistance, and effective channel length. The degree of nonuniformity depends strongly on the process technology, as revealed by three independent measurement techniques. Device simulation results have confirmed the impact of such edge effects on transistor parameters.