Investigation of 30 nm Gate-All-Around MOSFET sensitivity to heavy ions: a 3-D simulation study

Three-dimensional (3-D) numerical simulations of decananometer Gate-All-Around transistors with 30 nm channel length and 10 um Silicon film thickness have been performed to deeply investigate their electrical response to heavy ions irradiation. Results show that these GAA devices exhibit an excellent control of both impact ionization and bipolar amplification. A careful comparison between two-dimensional (2-D) and 3-D simulations is also reported to explore the limits of the 2-D approach for such ultra-deep submicrometer multi-gate device architectures. Index Terms--Bipolar amplification, gate-all-around transistor, heavy ions, MOSFET, simulation.