Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2X1 by cyclic gas-source molecular beam epitaxy from Si2H6

Growth of silicon on Ge(001) 2 times 1, using cyclic gas-source molecular beam epitaxy from silicon hydride, follows a mixed Stranski-Krastanov mode. An analysis of such layers using reflection high-energy electron diffraction, Auger electron spectroscopy, electron-energy-loss spectroscopy, scanning tunneling microscopy and high-resolution cross-sectional transmission electron microscopic studies following silicon deposition reveal surface segregation and growth-mode transitions, occurring in the initial phase of Si growth.