Measurements and modeling of MOSFET I-V characteristics with polysilicon depletion effect

Studies on polysilicon depletion effect on I-V properties for various MOSFETs reveal that a decrease in oxide thickness (tox), polysilicon gate concentration (NP) or increase in substrate impurity concentrations (ND) causes substantial I-V characteristic degradation. An analysis of a modified Pao-Sah model that includes polysilicon depletion factor reveals that model results agree well with experimental data for all device operation domains. The model calculates device I-V characteristics as a function of tox, NP and ND.