Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries

Submicrometer CMOS technologies provide well-established solutions to the implementation of low-noise front-end electronics for a wide range of detector applications. Since commercial CMOS processes maintain a steady trend in device scaling, it is essential to monitor the impact of these technological advances on the noise parameters of the devices. In this paper we present the results of an extensive analysis carried out on CMOS transistors fabricated in 0.35, 0.25, and 0.18 [micro]m technologies from different foundries. This allows us to evaluate the behavior of 1/f and channel thermal noise parameters with different gate oxide thickness and minimum channel length and to give an estimate of their process-to-process spread. The experimental analysis is focused on actual device operating conditions in monolithic detector readout systems. This means that moderate or weak inversion are often the only relevant regions for front-end devices. To account for different detector requirements, the noise behavior of devices with different geometries and input capacitance was investigated. The large set of data gathered from the measurements provides a powerful tool to model noise parameters and establish front-end design criteria in deep submicrometer CMOS processes. Index Terms--CMOS, deep submicron, front-end electronics, MOSFET, noise.