Back to Search Start Over

Characterization of mixed-signal properties of MOSFETs with high-[kappa] (SiON/HfSiON/TaN) gate stacks

Authors :
Rittersma, Z.M.
Vertregt, M.
Deweerd, W.
Van Elshocht, S.
Srinivasan, P.
Simoen, Eddy
Source :
IEEE Transactions on Electron Devices. May, 2006, Vol. 53 Issue 5, p1216, 10 p.
Publication Year :
2006

Abstract

The characterization of mixed-signal and noise properties of MOSFETs with Hf-based high-[kappa] gate dielectrics and TaN metal gates is presented. The optimization of both devices, such as channel doping engineering and high-[kappa] gate stack properties, is required to meet expectations on improvements of analog performance of low-power (LP) CMOS devices.

Subjects

Subjects :
Metal oxide semiconductor field effect transistors -- Design and construction
Silicon nitride -- Electric properties
Electron mobility -- Analysis
Electromagnetic noise -- Analysis
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
53
Issue :
5
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.149148970

Tools

Authors Abstract Subjects Details