Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers

A double barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB is investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.