Effects of substrate temperature and ion incident energy on silicon surface cleaning using a hydrogen plasma excited by electron cyclotron resonance

Hydrogen plasma irradiation into a high vacuum system defines the effect of substrate temperature and ion incident energy on silicon surface cleaning and hydrogen penetration into a silicon mass. Silicon oxide removal from the surface occurs when hydrogen ions with energies less than 40 electron volts strike the substrate surface with substrate temperatures ranging from room temperature to 400 degrees Celcius. Hydrogen ion bombardment due to the hydrogen plasma irradiation causes hydrogen penetration into the substrate surface.