The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure

Strain-induced electric fields affect the distribution structure. The piezoelectric characteristics of a GaN-AlN-GaN semiconductor-insulator-semiconductor structure with the growth axis along a crystallographic direction is examined. Flat band voltage can be displaced by the strain-induced electric fields forming a depletion area on one side and an accumulation area on the other side of the AlN insulator.