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Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates

Authors :
X.Q. Zhang
Z.G. Yao
S.H. Huang
Kumano, H.
Source :
Journal of Housing and Community Development. May-June, 2006, Vol. 63 Issue 3, 063709-1-063709-4
Publication Year :
2006

Abstract

High quality ZnO thin films are grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates and free-exciton absorption and exciton-LO phonon absorption peaks is observed in the films at room temperature. It is indicated that the exciton states are stable even at room temperature.

Details

Language :
English
ISSN :
1534648X
Volume :
63
Issue :
3
Database :
Gale General OneFile
Journal :
Journal of Housing and Community Development
Publication Type :
Academic Journal
Accession number :
edsgcl.148383628