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Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates
- Source :
- Journal of Housing and Community Development. May-June, 2006, Vol. 63 Issue 3, 063709-1-063709-4
- Publication Year :
- 2006
-
Abstract
- High quality ZnO thin films are grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates and free-exciton absorption and exciton-LO phonon absorption peaks is observed in the films at room temperature. It is indicated that the exciton states are stable even at room temperature.
Details
- Language :
- English
- ISSN :
- 1534648X
- Volume :
- 63
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Housing and Community Development
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.148383628