Single-mode optically activated phase modulator on GaAs/GaAlAs compound semiconductor rib waveguides

A 1.3 micrometer signal carrier laser and a free-carrier generator of wavelength HeNe 632.8 nanometers were employed to yield optical activation of a phase modulator. A 5 micrometer-diameter window enabling optical activation, combined with a device for rib waveguides, was also designed. An optically activated phase modulator indicated a modulation depth of 33% and an index modulation of 10 to the power -2. Modulation depth at the cutoff regime was 8.2 dB.