The nature of donor conduction in n-GaN

Electron spin resonance and photoluminescence studies of n-type GaN films reveal that conduction in these films results from a delocalized donor band. The studies, based on Van der Pauw-Hall measurements, are conducted on n-GaN films with AlN and GaN buffer layers and film thickness ranging from 0.5 to 10 microns. Test samples are grown using low pressure metal organic chemical vapor deposition techniques.