Electroluminescence properties of the [Gd.sup.3+] ultraviolet luminescent centers in Si[O.sub.2] gate oxide layers

The electroluminescence (EL) properties of the [Gd.sup.3+] ultraviolet (UV) luminescent centers in Si[O.sub.2] metal-oxide-semiconductor light emitting devices (MOSLEDs) are investigated. The strong EL quenching related to a negative charge trapping around the optically active [Gd.sup.3+] luminescent centers is observed during excitation by hot electron injection, suggesting different methods for improving the EL stability of rare-earth doped MOSLEDs.