Fabrication and characterization of molecular beam epitaxy grown thin-film GaAs waveguides for mid-infrared evanescent field chemical sensing

Thin-film GaAs waveguides were designed and fabricated by molecular beam epitaxy for use in mid-infrared (MIR) evanescent field liquid sensing. Waveguides were designed to facilitate the propagation of a single mode at a wavelength of 10.3 [micro]m emitted from a distributed feedback quantum cascade laser, which overlaps with molecular selective absorption features of acetic anhydride. The characterization of the waveguides shows transmission across a broad MIR band. Evanescent field absorption measurements indicate a significant sensitivity enhancement in contrast to multimode planar silver halide waveguides.