Thermal decomposition of native oxide on Si(100)

High-resolution x-ray photoelectron spectroscopy (XPS) is used in an investigation of thermal decomposition of native oxide on Si(100) subjected to ultrahigh vacuum. Wet chemical treatment (HCl/H2O2/H2O) yields a native oxide, and the treatment atomically cleans surfaces. High temperature heating causes a change in Si 2p and O 1s spectrums, and this is inferred from XPS measurements. Si structure is enhanced, and the full-width-at-half maximum reduces when temperature rises beyond 700 degrees centigrade.