Low-frequency noise in TaSiN/HfO(sub 2) nMOSFETs and the effect of stress-relieved preoxide interfacial layer

Authors :: Devireddy, Siva Prasad
Fang Wang
Bigang Min
Zlotnicka, Ania
Hsing-Huang Tseng
Celik-Butler, Zeynep
Tobin, Philip J.
Source :: IEEE Transactions on Electron Devices. March, 2006, Vol. 53 Issue 3, p538, 7 p.
Publication Year :: 2006
Abstract: A low-frequency noise characteristic is reported for TASiN-gated n-channel MOSFETs with atomic-layer deposited HfO(sub 2) on thermal SiO(sub 2) with stress-relieved preoxide (SRPO) pretreatment. The normalized noise spectral density values for the control devices are found to be lower when compared to reference poly Si gate stack with similar HfO(sub 2) dielectric.

Subjects :: Silicon nitride -- Electric properties
Hafnium -- Electric properties
Metal oxide semiconductor field effect transistors -- Design and construction
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