Characterization of the response of a double side micro-strip silicon detector to X-rays in the diagnostic energy range

We are investigating the use of a double side |micro~-strip silicon crystal for X-ray detection. The detector is 300 ||micro~meter~ thick and the read-out pitch is 100 ||micro~meter~ for both sides. It operates in capacitive charge division mode by means of floating strips between read-out strips. The detector has been irradiated by 241Am and 109Cd sources. Different zones within the 100 ||micro~meter~ read-out pitch have been individually exposed. Thus, the following characteristics have been studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution; (d) the spatial resolution. The absolute efficiency of the detector has also been measured at three energy values.