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InxGa(1-x)N/InyGa(1-y)N superlattices grown on GaN films
- Source :
- Journal of Applied Physics. Sept 15, 1993, Vol. 74 Issue 6, p3911, 5 p.
- Publication Year :
- 1993
-
Abstract
- Two-flow metalorganic chemical-vapor deposition method facilitates the growth of high-quality Indalium Gallium Nitride (In Ga N) superlattices on the surface of Gallium Nitride (Ga N) films. Satellite peaks detected by double-crystal X-ray rocking curve measurements reveal the occurrence of In0.22Ga0.78N/In0.06Ga0.94N superlattices. Room-temperature photoluminescence measurements facilitate the observation of quantum effects and are used for the comparative analysis of In0.22Ga0.78N/In0.06Ga0.94N superlattices.
Details
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14568112