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Photo reflectance study of GaAsSb/InP heterostructutes
- Source :
- Journal of Applied Physics. Dec 15, 2005, Vol. 98 Issue 12, p123524-1, 7 p.
- Publication Year :
- 2005
-
Abstract
- Photoreflectance (PR) spectroscopy experiments are reported on GaAsSb/InP heterosrtuctures. A study is conducted on the GaAsSb/InP PR spectrum as a function of temperature and the transition nature is shown to change from Franz-Keldysh oscillations (FKO) at room temperature to a third derivative functional form (TDFF) line shape at low temperatures.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.145504011