Efficacy of single and double SiN(sub x) interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

A report is presented on the growth of and evolution of defects in GaN epilayers having single- and double-layer SiN(sub x) nanoporous insertion layers. The SiN(sub x) was formed in situ in the growth chamber of an organometallic vapor-phase epitaxy system by simultaneous flow of diluted silane and ammonia.