Electron transport through GaAlAs barriers in GaAs

Electron transport through GaAlAs barriers in GaAs was investigated to elucidate the effects of the electric field on the apparent barrier height. The results showed that the Fowler-Nordheim regime became dominant at low temperatures and high electric fields. This indicated that the barrier acted as an insulating layer. At higher temperatures, the thermionic regime provided an apparent barrier height which decreased with the electric field and was equal to the expected band offset when extrapolated to zero field.