Characterisation of a GaAs MESFET oscillator at 4.2K

Authors :: Vollmer, E.
Gutmann, P.
Niemeyer, J.
Source :: IEEE Transactions on Applied Superconductivity. March, 1993, Vol. 3 Issue 1, p2828, 4 p.
Publication Year :: 1993
Abstract: The conversion efficiency, phase noise, power-levelling capability and frequency tuning of an X-band GaAs metallic semiconductor field effect transistor (MESFET) oscillator were evaluated. A stripline approach was applied for the analysis of the MESFET's components. The device was tested at both room and cryogenic temperatures. A microwave power of 4.2 K was generated by the oscillator.