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Temperature sensitivity of SOI-CMOS transistors for use in uncooled thermal sensing
- Source :
- IEEE Transactions on Electron Devices. Dec, 2005, Vol. 52 Issue 12, p2784, 7 p.
- Publication Year :
- 2005
-
Abstract
- The characterization of the achievable high temperature coefficient of current (TCC) of standard CMOS transistors implemented in silicon-on-insulator (SOI) substrates is discussed. Achievable TCC of more than 6 percent K in subthreshold and less than -0.4 percent/K in saturation is observed.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 52
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.143050531