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Interconnect capacitance characterization using charge-injection-induced error-free (cief) charge-based capacitance measurement (CBCM)
- Source :
- IEEE Transactions on Semiconductor Manufacturing. Feb, 2006, Vol. 19 Issue 1, p50, 7 p.
- Publication Year :
- 2006
-
Abstract
- In this work, we describe a novel operation of charge-injection-induced error-free charge-based capacitance measurement (CIEF CBCM) method. This method has the simplest test structure among various CBCM methods by using only one N/PMOS pair. CIEF CBCM has the advantage of being free from charge-injection-induced errors and of efficient layout area usage. It is very suitable for industrial applications for large amounts of accurate capacitance characterizations with a limited layout area. Besides, ClEF CBCM is also implemented for investigating the impact of floating dummy metal fills on interconnect capacitance directly from silicon data. Index Terms--Capacitance measurement, charge-based capacitance measurement (CBCM), charge injection, interconnect capacitance.
- Subjects :
- Business
Computers
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 08946507
- Volume :
- 19
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Semiconductor Manufacturing
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.142872345