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Computer simulation studies of ion implantation in crystalline silicon
- Source :
- IEEE Transactions on Electron Devices. Feb, 1992, Vol. 39 Issue 2, p264, 11 p.
- Publication Year :
- 1992
-
Abstract
- Ion implantation of boron, phosphorus and arsenic into crystalline silicon is studied. Computer simulation techniques such as the multiple-interaction method and binary collision approximation are employed to quantify the implant profiles as a function of interatomic potential, electronic energy loss and target orientation effects. Both axial and planar channeling were considered for all cases.
Details
- ISSN :
- 00189383
- Volume :
- 39
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14286886