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Hysteresis in organic field-effect devices: Simulated effects due to trap recharging
- Source :
- Journal of Applied Physics. Dec 1, 2005, Vol. 98 Issue 11, p114505-1, 9 p.
- Publication Year :
- 2005
-
Abstract
- Hysteresis in the field effect is studied at best in the metal-oxide-semiconductor (MOS) capacitor without the additional influence of the source/drain contacts of the transistor. The origin of the hysteresis in organic devices is a combination of slow transport with a reaction other than trap recharging.
- Subjects :
- Field-effect transistors -- Design and construction
Hysteresis -- Analysis
Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.142807700