Atomic layer growth of oxide thin films with perovskite-type structure by reactive evaporation

The atomic layer growth of oxide thin films with perovskite-type structure by reactive evaporation was investigated using reflection high-energy electron diffraction. The results showed that the alternate supply of Ba or Sr and Ti on the growing surface allowed atomic layer growth to be achieved. In coevaporation, epitaxial growth was characterized by a unit-cell-by-unit-cell mode, with the surface of each unit cell terminated by a TiO2 layer.