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High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance

Authors :
Cellek, O.O.
Ozer, S.
Besikci, C.
Source :
IEEE Journal of Quantum Electronics. July, 2005, Vol. 41 Issue 7, p980, 6 p.
Publication Year :
2005

Abstract

The detailed characteristics of long-wave-length infrared InP-InGaAs quantum-well infrared photodetectors (QWIPs) and 640 x 512 focal plane array (FPA) grown by molecular beam epitaxy are reported. The results show the potential of InP-InGaAs QWIPs for thermal imaging applications requiring high responsivity and short integration times.

Subjects

Subjects :
Imaging systems -- Analysis
Epitaxy -- Analysis
Gallium arsenide -- Optical properties
Business
Computers
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189197
Volume :
41
Issue :
7
Database :
Gale General OneFile
Journal :
IEEE Journal of Quantum Electronics
Publication Type :
Academic Journal
Accession number :
edsgcl.142697484

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