Chemical vapor deposition and characterization of undoped and nitrogen-doped single crystalline 6H-SiC

Authors :: Karmann, S.
Suttrop, W.
Schoner, A.
Schadt, M.
Haberstroh, C.
Engelbrecht, F.
helbig, R.
Pensl, G.
Stein, R.A.
Leibenzeder, S.
Source :: Journal of Applied Physics. Dec 1, 1992, Vol. 72 Issue 11, p5437, 6 p.
Publication Year :: 1992
Abstract: The growth characteristics and the properties of undoped and nitrogen-doped single crystalline 6H-SiC thin films fabricated by chemica vapor deposition were investigated. The results showed that the doped layers featured high donor concentrations in the upper 10(super 4) square centimeter(super -3) range. Electron mobilities were measured at 370 square centimters per V s at room temperature.

Subjects :: Chemical vapor deposition -- Research
Semiconductor doping -- Research
Semiconductor films -- Research
Physics

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