Analysis and optimization of quantum-well thickness for GaAs/AlGaAs and InGaAs/GaAs/AlGaAs quantum-well lasers

Authors :: Zou, W.X.
Merz, J.L.
Coldren, L.A.
Source :: Journal of Applied Physics. Dec 1, 1992, Vol. 72 Issue 11, p5047, 8 p.
Publication Year :: 1992
Abstract: The gain-current coefficient and current density of GaAs/AlGaAs and InGaAs/GaAs/AlGaAs quantum well laser structures as a function of quantum well thickness were investigated. The results showed that optimal quantum well thickness was at 100 and 105 angstroms. Use of the optimum quantum well thickness allowed laser threshold current density to be decreased by 15%. The results were in good agreement with current experimental data.

Subjects :: Lasers -- Research
Quantum wells -- Research
Thickness measurement -- Research
Physics

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