Ion channeling study of Scx(Yb,Er)1-xAs films on GaAs(001)

Authors :: Guivarc'h, A.
Ballini, Y.
Minier, M.
Guenais, B.
Dupas, G.
Ropars, G.
Regreny, A.
Source :: Journal of Applied Physics. June 15, 1993, Vol. 73 Issue 12, p8221, 6 p.
Publication Year :: 1993
Abstract: The various lattice matched and mismatched ScxYb1-xAs and ScyEr1-yAs films grown on GaAs(001) were studied. Helium ion backscattering and ion channeling experiments were performed on epitaxially-prepared samples to determine the effects of the mosaic structures and the tilts caused by strain relaxation on the aligned spectra. Results show that the aligned spectra is sensitive to the mosaic structures of the rare-earth monoarsenide layers and to their eventual tilt.