Defect identification in semiconductors by Brewster angle spectroscopy

The effectiveness of Brewster angle spectroscopy (BAS) for characterizing point defects in semiconductors was studied. The results showed that BAS was capable of identifying deep defects at room temperature without electrical contacting. BAS sensitivity was achieved from the extinction condition for reflection of p-polarized light and the sensitive changes of the Brewester angle upon additional absorption in the energy range below semiconductor band gaps.