Cite
Smoothing of the Si surface using CF4/O2 down-flow etching
MLA
Nishino, H., et al. “Smoothing of the Si Surface Using CF4/O2 down-Flow Etching.” Journal of Applied Physics, vol. 74, no. 2, July 1993, p. 1349. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.14239790&authtype=sso&custid=ns315887.
APA
Nishino, H., Hayasaka, N., Horioka, K., Shiozawa, J., Nadahara, S., Shooda, N., Akama, Y., Sakai, A., & Okano, H. (1993). Smoothing of the Si surface using CF4/O2 down-flow etching. Journal of Applied Physics, 74(2), 1349.
Chicago
Nishino, H., N. Hayasaka, K. Horioka, J. Shiozawa, S. Nadahara, N. Shooda, Y. Akama, A. Sakai, and H. Okano. 1993. “Smoothing of the Si Surface Using CF4/O2 down-Flow Etching.” Journal of Applied Physics 74 (2): 1349. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.14239790&authtype=sso&custid=ns315887.