Analysis of the electroluminescence observed during the anodic oxidation of porous layers formed on lightly p-doped silicon

The electroluminescence observed during the anodic oxidation of porous silicon layers formed on highly P-doped substrates is investigated for determining its different characteristics. The characteristics of the emission are similar to those of photoluminescence found on the same porous layers, and both the phenomena use the same basic mechanisms. The passivation enhancement provided by the electrochemical oxidation explains the increase in emission intensity with oxidation.