Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial ReSi2 films on an n-Si(100) substrate

X-ray diffraction, high-resolution transmission electron microscopy, electrical measurement and two million electron volts positive Helium ion backscattering spectrometry were used to study the structural and electrical characteristics of 300 kilo electron volt silicon ion or 380 kilo electron volt Argon ion-implanted epitaxial ReSi2 films grown on an n-Si (100) substrate. Static disorder in the film is caused by ion implantation, which overlaps and causes the growth of an amorphous layer.