X-ray photoelectron and Auger electron diffraction probing of Ge heteroepitaxyon Si (001) 2 x 1

MLA

Diani, M., et al. “X-Ray Photoelectron and Auger Electron Diffraction Probing of Ge Heteroepitaxyon Si (001) 2 x 1.” Journal of Applied Physics, vol. 73, no. 11, June 1993, p. 7412. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.14138114&authtype=sso&custid=ns315887.

APA

Diani, M., Bischoff, J. L., Kubler, L., & Bolmont, D. (1993). X-ray photoelectron and Auger electron diffraction probing of Ge heteroepitaxyon Si (001) 2 x 1. Journal of Applied Physics, 73(11), 7412.

Chicago

Diani, M., J.L. Bischoff, L. Kubler, and D. Bolmont. 1993. “X-Ray Photoelectron and Auger Electron Diffraction Probing of Ge Heteroepitaxyon Si (001) 2 x 1.” Journal of Applied Physics 73 (11): 7412. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.14138114&authtype=sso&custid=ns315887.