Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer

An AlGaN/GaN high electron mobility transistor with a Si3N4 passivation layer is prepared that is deposited in situ in metal-organic chemical-vapor deposition reactor in the same growth sequence, as the rest of the layer stack. The SiN4 is shown to be of high quality and stoichiometric in composition.