Determination of r elative internal quantum efficiency in InGaN/GaN quantum wells

Authors :: Martinez, C.E.
Stanton, N.M.
Kent, A.J.
Graham, D.M.
Dawson, P.
Humphreys, C.J.
Kappers, M.J.
Source :: Journal of Applied Physics. Sept 1, 2005, Vol. 98 Issue 5, p053509-1, 5 p.
Publication Year :: 2005
Abstract: The relative quantum efficiency in a series of InGaN/GaN single quantum wells with differing indium concentration is investigated. All the samples exhibit high efficiency, with the maximum being observed in the 10% indium sample.

Subjects :: Gallium compounds -- Electric properties
Nitrides -- Electric properties
Indium -- Electric properties
Quantum wells -- Research
Physics

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