Thermal stability of InGaAs/InGaAsP quantum wells

Authors :: Peyre, H.
Alsina, F.
Camassel, J.
Pascual, J.
Glew, R.W.
Source :: Journal of Applied Physics. April 15, 1993, Vol. 73 Issue 8, p3760, 9 p.
Publication Year :: 1993
Abstract: The thermal stability of InGaAs/InGaAsP quantum wells was investigated by analyzing the influence of interdiffusion on the photoluminescence and Raman spectra. A blue shift which cannot be attributed solely to intermixing of the cationic species was observed. The structures remained lattice matched after annealing in the temperature range of 650 to 750 degres celsius. Thermal stability was observed up to a temperature of 650 degrees celsius.