Time-resolved temperature measurements during rapid solidification of Si-As alloys induced by pulsed-laser melting

The rapid solidifaction of Si-As alloys by pulsed-laser melting at regrowth velocities was investigated using time-resolved measurements and Rutherford backscattering. The results showed that the congruent melting temperature was 1565 +/- 25 K for 4.5 at.% As and 1425 +/- 25 K for 9 at.% As. Fusion enthalpy was not affected by the composition. There was good agreement between experimental results and values derived from heat flow simulations.