Limits of strain relaxation in InGaAs/GaAs probed in real time by in situ wafer curvature measurement

The in situ stress measurements during molecular-beam epitaxy growth of In(sub x)Ga(sub 1-x)As/GaAs provide insight into the relaxation behavior of thin films grown on mismatched substrates. The effect of a nonunifom dislocation array configuration on the overall relaxation behavior is discussed and the results from dislocation dynamics simulations are presented.