MeV energy Fe and Co implants to obtain buried high resistance layers and tocompensate donor implant tails in InP

The feasibility of using high-energy transition-metal implants to obtain buried high resistance layers and compensate donor implant tails in indium phosphide is evaluated. Fe and Co implantations are performed into epitaxially-grown InP:Sn wafers at 200 degrees centigrade. The specimens are then subjected to secondary-ion-mass spectrometry, polaron electrochemical capacitance-voltage profiling and Rutherford backscattering analyses. Results show that aside from the implantation peak, the annealing process also generated additional peaks in the SIMS depth profiles.