Photoluminescence of highly porous nanostructures Si-based thin films deposited by pulsed laser ablation

The photoluminescence (PL) behavior of pulsed laser deposition (PLD)-deposited Si-based nanoporous SiO(sub x)/Si, SiN(sub x), and SiO(sub x) thin films, having completely different chemistries and microstructures is investigated. The results demonstrate that the red PL peak at 1.5 eV is due to the localized states at the oxidized surfaces of these materials, while the green PL peak at 2.3 eV is due to oxygen-related defects in their local disordered nanostructures.