A model for the diffusion and precipitation of antimony in highly doped delta layers in silicon

Diffusion and precipitation of antimony in highly doped delta layers in silicon were investigated using Rutherford backscattering spectrometry. The results showed that nuclei generation occurred either by the rapid and simultaneous generation of a limited number of nuclei with a subsequent diffusion-controlled growth or by slow continuous generation of a larger numberof nuclei at random sites in the delta plane with subsequent incorporation-controlled growth.