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Morphology of oxide precipitates in Czochralski silicon degenerately doped with boron
- Source :
- Journal of Applied Physics. Nov 1, 1992, Vol. 72 Issue 9, p4026, 5 p.
- Publication Year :
- 1992
-
Abstract
- The morphological structure of oxide precipitates in boron-doped Czochralski silicon was investigated using transmission electron microscopy. The results showed that the oxide precipitates featured a disk-shaped structure with both (110)- and (111)-type habit planes. This indicated the possibility that localized reduction in the elastic moduli of silicon could facilitate the formation of disk-shaped precipitates on other planes.
- Subjects :
- Silicon -- Research
Morphology -- Research
Oxides -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 72
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.13856224