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Morphology of oxide precipitates in Czochralski silicon degenerately doped with boron

Authors :
Wijaranakula, W.
Source :
Journal of Applied Physics. Nov 1, 1992, Vol. 72 Issue 9, p4026, 5 p.
Publication Year :
1992

Abstract

The morphological structure of oxide precipitates in boron-doped Czochralski silicon was investigated using transmission electron microscopy. The results showed that the oxide precipitates featured a disk-shaped structure with both (110)- and (111)-type habit planes. This indicated the possibility that localized reduction in the elastic moduli of silicon could facilitate the formation of disk-shaped precipitates on other planes.

Details

ISSN :
00218979
Volume :
72
Issue :
9
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.13856224